Oxygen vacancy region formation in BaTiO3 adjacent to the interface between the internal electrode and the dielectric layer in Ni–Sn internal electrode multilayer ceramic capacitor exhibiting leakage current suppression

Abstract

Abstract This study underlines the ceramic BaTiO3 dielectric layer adjacent to the electrode of long-term reliability-improved Ni–Sn alloy internal electrode BaTiO3-based multilayer ceramic capacitor to clarify the cause of electric barrier formation. Electron energy loss spectroscopy measurements of the Ti L 3,2 near the edges and the O K near the edge structure changes to characterize the existence of an oxygen vacancy region, approximately 60 nm in width, and generated in BaTiO3 adjacent to the interface. Accordingly, the n-type semiconductor layer of BaTiO3 that originated from the oxygen vacancies, led to the formation of a rigid Schottky barrier at the interface.