Undoped p-type BaSi2 emitter prepared by thermal evaporation and post-annealing for crystalline silicon heterojunction solar cells
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
https://iopscience.iop.org/article/10.35848/1882-0786/ab8727/pdf
Reference30 articles.
1. Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%
2. Investigation of the energy band structure of orthorhombic BaSi2 by optical and electrical measurements and theoretical calculations
3. Electronic and optical properties of bulk crystals of semiconducting orthorhombic BaSi2 prepared by the vertical Bridgman method
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1. Microstructural, electrical, and optoelectronic properties of BaSi2 epitaxial films grown on Si substrates by close-spaced evaporation;Journal of Alloys and Compounds;2023-12
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3. High-temperature post-annealing effect on the device performance of B-doped p-type BaSi2/n-Si heterojunction solar cells grown by molecular beam epitaxy;Japanese Journal of Applied Physics;2022-11-30
4. Improved conversion efficiency of p-type BaSi2/n-type crystalline Si heterojunction solar cells by a low growth rate deposition of BaSi2;AIP Advances;2022-04-01
5. High-temperature post-annealing effect on the surface morphology and photoresponse and electrical properties of B-doped BaSi2 films grown by molecular beam epitaxy under various Ba-to-Si deposition rate ratios;Journal of Crystal Growth;2022-01
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