Prospects of mist CVD for fabrication of β-Ga2O3 MESFETs on β-Ga2O3 (010) substrates

Abstract

Abstract Mist CVD was applied to grow the β-Ga2O3 channel layer of a MESFET on a semi-insulating β-Ga2O3 (010) substrate. The mobility and carrier concentration of the channel layer were 80 cm2 V–1 s–1 and 6.2 × 1017 cm−3, respectively. The device exhibited a pinch-off characteristic with a threshold gate voltage of −9 V, and the maximum drain current was 240 mA mm−1. The maximum transconductance was 46 mS mm−1 and the on-resistance was 30 Ω mm. This device performance suggests that mist CVD is a potential growth technology capable of providing low-cost devices in the future.