Forward thermionic field emission transport and significant image force lowering caused by high electric field at metal/heavily-doped SiC Schottky interfaces
Author:
Funder
Program on Open Innovation Platform with Enterprises, Research Institute and Academia
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
https://iopscience.iop.org/article/10.35848/1882-0786/ab7bcd/pdf
Reference31 articles.
1. Fundamentals of Power Semiconductor Devices
2. Material science and device physics in SiC technology for high-voltage power devices
3. SiC Merged p-n/Schottky Rectifiers for High Voltage Applications
4. Junction Barrier Schottky Diodes in 4H-SiC and 6H-SiC
5. A dual-metal-trench Schottky pinch-rectifier in 4H-SiC
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