Strain engineered C31 field-effect-transistors: a new strategy to break 60 mV/decade by using electron injection from intrinsic isolated states
Author:
Funder
China Key Research and Development Program
National Natural Science Foundation of China
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
https://iopscience.iop.org/article/10.35848/1882-0786/ac0c66/pdf
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1. The chips are down for Moore’s law
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