Memristor based on a layered FePS3 2D material with dual modes of resistive switching-Reference-Cited by-同舟云学术

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Memristor based on a layered FePS3 2D material with dual modes of resistive switching

Published:2020-09-11 Issue:10 Volume:13 Page:105001
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Zhao Guihua,Ke Xi,Li Xusheng,Wang Li,Yin Ningyuan,Jin Xing,Chen Jianjun,Xu Yitong,Wang Kai,Yu Xiaolan,Yu Zhiyi

Funder

national nature science foundation of China

National Key R&D Program of China

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

https://iopscience.iop.org/article/10.35848/1882-0786/abb4b0/pdf

Reference36 articles.

1. Memory effects in complex materials and nanoscale systems

2. Synaptic electronics: materials, devices and applications

3. Learning Induces Long-Term Potentiation in the Hippocampus

4. Imaging Physiologic Dysfunction of Individual Hippocampal Subregions in Humans and Genetically Modified Mice

5. Short-term plasticity and long-term potentiation mimicked in single inorganic synapses

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