Polarity tuning of crystalline AlN films utilizing trace oxygen involved sputtering and post-high-temperature annealing-Reference-Cited by-同舟云学术

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Polarity tuning of crystalline AlN films utilizing trace oxygen involved sputtering and post-high-temperature annealing

Published:2021-07-14 Issue:8 Volume:14 Page:085501
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Liu Zhibin,Guo Yanan,Yan Jianchang,Zeng Yiping,Wang Junxi,Li Jinmin

Funder

Beijing Nova Program

Youth Innovation Promotion Association CAS

the National Key R&D Program of China

the National Natural Sciences Foundation of China

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

https://iopscience.iop.org/article/10.35848/1882-0786/ac114d/pdf

Reference31 articles.

1. The 2020 UV emitter roadmap;Amano;J. Phys. D,2020

2. Al-rich AlGaN based transistors;Baca;J. Vac. Sci. Technol. A,2020

3. N-polar III-nitride Green (540 nm) light emitting diode;Akyol;Jpn. J. Appl. Phys.,2011

4. N-polar III-nitride quantum well light-emitting diodes with polarization-induced doping;Verma;Appl. Phys. Lett.,2011

5. N-polar GaN/AlGaN/GaN high electron mobility transistors;Rajan;J. Appl. Phys.,2007

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1. Perspectives and progress on wurtzite ferroelectrics: Synthesis, characterization, theory, and device applications;Applied Physics Letters;2024-02-19

2. The AlN lattice-polarity inversion in a high-temperature-annealed c-oriented AlN/sapphire originated from the diffusion of Al and O atoms from sapphire;Nanoscale Advances;2024

3. Polarity control of sputter-deposited AlN with high-temperature face-to-face annealing;Materials Science in Semiconductor Processing;2023-11

4. 229 nm far-ultraviolet second harmonic generation in a vertical polarity inverted AlN bilayer channel waveguide;Applied Physics Express;2023-06-01

5. Growth mode modulation and crystalline quality improvement of highly relaxed n-Al0.6Ga0.4N on high-temperature-annealing AlN/sapphire template via SiH4-pretreatment;Journal of Crystal Growth;2023-05

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