Growth Mechanism, Structural and Photoelectrochemical Study of Zinc Tellurium Thin Film

Abstract

Chalcogenides II-VI group of crystalline material zinc tellurium thin films have been synthesized by chemical bath deposition (CBD) method in which glass substrates have been used for deposition technique in presence of triethanolamine solution. The as-synthesized films were characterization by X-ray diffraction scanning electron microscopy (XRD), optical spectroscopy and thermoelectric techniques. The deposited material was orthorhombic in shape. The 2.01 eV is the optical band gap energy of the sample and the electrical conductivity of the thin film was originating in the order of 10-8 (Ω cm)-1, which showed n-type thermoelectrical conductivity. The solar cell can be represented as a n-ZnTe|NaI (0.1M) + I2 (0.1M)|C(graphite). The solar efficiency of the cell was found to be 1.03%.