Thermal Creation of Defects in GaTe-Reference-Cited by-同舟云学术

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Thermal Creation of Defects in GaTe

Published:2008-12-19 Issue:12 Volume:47 Page:8719-8722
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Zubiaga Asier,García Jose-Angel,Plazaola Fernando,Muñoz-Sanjosé Vicente,Martínez-Tomás Carmen

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference23 articles.

1. Hall effect in GaTe single crystals

2. Transport anisotropy in GaTe

3. High Pressure EXAFS on GaTe Single Crystal Including Polarization

4. Anisotropy of the refractive index and absorption coefficient in the layer plane of gallium telluride single crystals

5. Electrical resistivity and hall effect of single crystals of GaTe and GaSe

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoelectric and photoluminescence properties of CdTe-GaTe composite;physica status solidi (b);2016-10-10

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