Photoelectric and photoluminescence properties of CdTe-GaTe composite-Reference-Cited by-同舟云学术

Photoelectric and photoluminescence properties of CdTe-GaTe composite

Published:2016-10-10 Issue:12 Volume:253 Page:2515-2522
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Caraman Iuliana¹,Spalatu Nicolae²,Evtodiev Igor³⁴,Untila Dumitru³⁴,Leontie Liviu⁵,Caraman Mihail³

Affiliation:

1. Engineering Department; Vasile Alecsandri University of Bacau; 157 Calea Marasesti RO-600115 Bacau Romania

2. Department of Materials Science; Tallinn University of Technology; Ehitajate tee, 5 EE-19086 Tallinn Estonia

3. Faculty of Physics and Engineering; Moldova State University; 60 A. Mateevici MD-2009 Chisinau Republic of Moldova

4. Ghitu Institute of Electronic Engineering and Nanotechnologies; Academy of Sciences of Moldova; Academiei, 3/3 MD-2028 Chisinau Republic of Moldova

5. Alexandru Ioan Cuza University of Iasi; Carol I, 11 RO-700506 Iasi Romania

Funder

Moldova State University

Estonian Ministry of Education and Research

European Commission

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201600485/fullpdf

Reference65 articles.

1. Ab initio electronic band structure study of III–VI layered semiconductors

2. Growth, characterisation and electrical anisotropy in layered chalcogenides GaTe and InTe

3. Anisotropy of the refractive index and absorption coefficient in the layer plane of gallium telluride single crystals

4. Electrochemical growth of GaTe onto the p-type Si substrate and the characterization of the Sn/GaTe Schottky diode as a function of temperature

5. Structure and microstructure of GaTe crystals grown by High-Pressure vertical zone melting

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