Metalorganic Vapor Phase Epitaxial Growth Parameter Dependence of Phase Separation in Miscibility Gap of InGaAsP
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference16 articles.
1. Miscibility gaps in quaternary III/V alloys
2. Composition-Modulated Structures in InGaAsP and InGaP Liquid Phase Epitaxial Layers Grown on (001) GaAs Substrates
3. Composition modulation in liquid phase epitaxial InxGa1−xAsyP1−ylayers lattice matched to InP substrates
4. Influence of the growth temperature and substrate orientation on the layer properties of MOVPE-growth
5. Elimination of wavy layer growth phenomena in strain-compensated GaInAsP/GaInAsP multiple quantum well stacks
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1. Impact of the Interruption Duration on Photoluminescence Properties of MOCVD-Grown GaAsP/InAlGaAs Quantum Well Structures;Nanomaterials;2024-09-10
2. Growth of compressively strained Ga In1As P1 quantum wells for 690–730 nm laser emission;Journal of Crystal Growth;2023-02
3. Distributed Bragg reflector lasers emitting between 696 and 712 nm;Electronics Letters;2022-10-10
4. Tunable Bandgap GaInAsP Solar Cells With 18.7% Photoconversion Efficiency Synthesized by Low-Cost and High-Growth Rate Hydride Vapor Phase Epitaxy;IEEE Journal of Photovoltaics;2018-11
5. Coexistence properties of phase separation and CuPt-ordering in InGaAsP grown on GaAs substrates by organometallic vapor phase epitaxy;Journal of Crystal Growth;2010-07
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