Influence of the growth temperature and substrate orientation on the layer properties of MOVPE-growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasers
2. Calculation of Miscibility Gap in Quaternary InGaPAs with Strictly Regular Solution Approximation
3. Miscibility gaps in quaternary III/V alloys
4. Two-dimensional phase separation inIn1−xGaxAsyP1−yepitaxial layers
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2. Effects of substrate miscut on the properties of InGaP solar cells grown on GaAs(001) by solid-source molecular beam epitaxy;Japanese Journal of Applied Physics;2017-07-14
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