Effects of substrate miscut on the properties of InGaP solar cells grown on GaAs(001) by solid-source molecular beam epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/56/i=8S2/a=08MC08/pdf
Reference30 articles.
1. Future technology pathways of terrestrial III–V multijunction solar cells for concentrator photovoltaic systems
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1. High-Speed MOVPE Growth of InGaP Solar Cells;IEEE Journal of Photovoltaics;2020-03
2. Growth of InGaAs Solar Cells on InP(001) Miscut Substrates Using Solid‐Source Molecular Beam Epitaxy;physica status solidi (a);2019-09-23
3. MBE of III-V Semiconductors for Solar Cells;Molecular Beam Epitaxy;2019-02-08
4. Enhancement of open-circuit voltage in InGaP solar cells grown by solid source molecular beam epitaxy;Japanese Journal of Applied Physics;2018-07-05
5. Fabrication of GaAs solar cells grown with InGaP layers by hydride vapor-phase epitaxy;Japanese Journal of Applied Physics;2018-07-05
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