Effect of Mixed-Mode Electrical Stress on High-Frequency and RF Power Characteristics of SiGe Hetero-Junction Bipolar Transistors-Reference-Cited by-同舟云学术

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Effect of Mixed-Mode Electrical Stress on High-Frequency and RF Power Characteristics of SiGe Hetero-Junction Bipolar Transistors

Published:2008-04-25 Issue:4 Volume:47 Page:2872-2876
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hung Cheng-Chou,Liao Wen-Shiang,Huang Sheng-Yi,Chen Kun-Ming,Huang Guo-Wei,Lien Chen-Hsin

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference15 articles.

1. Degradation mechanisms in polysilicon emitter bipolar junction transistors for digital applications

2. Junction degradation in bipolar transistors and the reliability imposed constraints to scaling and design

3. Current-acceleration for rapid time-to-failure determination of bipolar junction transistors under emitter-base reverse-bias stress

4. Degradation of bipolar transistor current gain by hot holes during reverse emitter-base bias stress

5. Hot electron and hot hole degradation of UHV/CVD SiGe HBT's

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A super junction SiGe low-loss fast switching power diode;Chinese Physics B;2009-01

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