Characterization of Sensitivity and Resolution of Silicon Resistive Probe-Reference-Cited by-同舟云学术

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Characterization of Sensitivity and Resolution of Silicon Resistive Probe

Published:2008-03-14 Issue:3 Volume:47 Page:1717-1722
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kim Junsoo,Lee Jaehong,Song Ickhyun,Lee Jong Duk,Park Byung-Gook,Hong Seungbum,Ko Hyoungsoo,Min Dong-Ki,Park Hongsik,Park Chulmin,Jung Juhwan,Shin Hyungcheol

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference14 articles.

1. Overview of magneto-resistive probe heads for nanoscale magnetic recording applications

2. VLSI-NEMS chip for parallel AFM data storage

3. The "millipede" - nanotechnology entering data storage

4. Scanning resistive probe microscopy: Imaging ferroelectric domains

5. Principle of ferroelectric domain imaging using atomic force microscope

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Scanning probe-type data storage beyond hard disk drive and flash memory;MRS Bulletin;2018-05

2. The next generation mass storage devices – Physical principles and current status;Contemporary Physics;2014-02-11

3. High-Resolution Field Effect Sensing of Ferroelectric Charges;Nano Letters;2011-03-04

4. Scanning probe memories – Technology and applications;Current Applied Physics;2011-03

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