Proposal for ZnS/MgxBeyZn1-x-yS Quantum Wells
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference38 articles.
1. Hetero-epitaxial growth of BexZn1−xSe on Si(0 0 1) and GaAs(0 0 1) substrates
2. Growth and characterisation of Zn1−xBexSe mixed crystals
3. Room-Temperature Ultraviolet Photoluminescence of BeZnSe on GaP(001)
4. Epitaxial Growth of BeZnSe on CaF2/Si(111) Substrate
5. Improvement of Crystalline Quality of BeZnSe Using Buffer Layer by Migration Enhanced Epitaxy on GaP(001) Substrate
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of Exciton-Longitudinal Optical Phonon Interaction οn Exciton Binding Energies in ZnS/MgxBeyZn1-x-yS Quantum Wells;Acta Physica Polonica A;2010-10
2. Threshold current density in ZnS/MgBeZnS quantum well ultraviolet lasers;Optical Review;2010-05
3. Effect of Image Charge on Exciton Binding Energy in ZnS/BexZn1-xS Quantum Wells;Japanese Journal of Applied Physics;2009-12-21
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