Electronic Structure Study of Local Dielectric Properties of Lanthanoid Oxide Clusters-Reference-Cited by-同舟云学术

Electronic Structure Study of Local Dielectric Properties of Lanthanoid Oxide Clusters

Published:2008-01-18 Issue:1 Volume:47 Page:205-211
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Doi Kentaro,Mikazuki Yutaka,Sugino Shinya,Doi Tatsuki,Szarek Pawel,Senami Masato,Shiraishi Kenji,Iwai Hiroshi,Umezawa Naoto,Chikyo Toyohiro,Yamada Keisaku,Tachibana Akitomo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference29 articles.

1. Epitaxial growth of Pr2O3 on Si(111) and the observation of a hexagonal to cubic phase transition during postgrowth N2 annealing

2. High-resolution depth profiling in ultrathin Al2O3 films on Si

3. High-κ gate dielectrics: Current status and materials properties considerations

4. Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon

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