Investigation of Anomalous Optical Characteristics of InGaAsP Layers on GaAs Substrates Grown by Metalorganic Vapor Phase Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference22 articles.
1. High power aluminium-free InGaAsP/GaAs pumping diode lasers
2. Optimized structure for InGaAsP/GaAs 808 nm high power lasers
3. Highly Reliable Operation of High-Power InGaAsP/InGaP/AlGaAs $\bf 0.8 {\mbi \mu } m$ Separate Confinement Heterostructure Lasers
4. Miscibility gaps in quaternary III/V alloys
5. Calculation of Miscibility Gap in Quaternary InGaPAs with Strictly Regular Solution Approximation
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1. Impact of the Interruption Duration on Photoluminescence Properties of MOCVD-Grown GaAsP/InAlGaAs Quantum Well Structures;Nanomaterials;2024-09-10
2. Effect of high temperature rapid thermal annealing on optical properties of InGaAsP grown by molecular beam epitaxy;Optical Materials Express;2017-10-03
3. Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy;Solar Energy Materials and Solar Cells;2015-06
4. Coexistence properties of phase separation and CuPt-ordering in InGaAsP grown on GaAs substrates by organometallic vapor phase epitaxy;Journal of Crystal Growth;2010-07
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