Impact of Geometrical and Electrical Parameters on Speed Performance Characteristics in Ultimate Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors-Reference-Cited by-同舟云学术

Impact of Geometrical and Electrical Parameters on Speed Performance Characteristics in Ultimate Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Published:2008-05-16 Issue:5 Volume:47 Page:3390-3395
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Loussier Xavier,Munteanu Daniela,Autran Jean-Luc,Tintori Olivier

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference6 articles.

1. Multiple-gate SOI MOSFETs: device design guidelines

2. Low-power high-performance double-gate fully depleted SOI circuit design

3. Ultrathin Strained-SOI by Stress Balance on Compliant Substrates and FET Performance

4. High performance ultrathin SOI MOSFET's obtained by localized oxidation

5. Recessed-channel structure for fabricating ultrathin SOI MOSFET with low series resistance

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5. Simulation Analysis of Quantum Confinement and Short-Channel Effects in Independent Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors;Japanese Journal of Applied Physics;2008-09-12