An Investigation of Bias Temperature Instability in Hydrogenated Low-Temperature Polycrystalline Silicon Thin Film Transistors-Reference-Cited by-同舟云学术

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An Investigation of Bias Temperature Instability in Hydrogenated Low-Temperature Polycrystalline Silicon Thin Film Transistors

Published:2002-09-15 Issue:Part 1, No. 9 Volume:41 Page:5517-5522
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lin Ching-Wei,Tseng Chang-Ho,Chang Ting-Kuo,Chang Yuan-Hsun,Chu Fang-Tsun,Lin Chiung-Wei,Wang Wen-Tung,Cheng Huang-Chung

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=9R/a=5517/pdf

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermally generated leakage current mechanisms of metal-induced laterally crystallized n-type poly-Si TFTs under hot-carrier stress;Solid-State Electronics;2011-08

2. Field-enhanced-generated leakage current of metal-induced laterally crystallized hydrogenated n-type poly-Si TFTs under hot-carrier stress;Semiconductor Science and Technology;2009-07-17

3. Degradation Behaviors of Metal-Induced Laterally Crystallized n-Type Polycrystalline Silicon Thin-Film Transistors Under DC Bias Stresses;IEEE Transactions on Electron Devices;2007-02

4. Low-Temperature Power Device: A New Poly-Si High-Voltage LDMOS With Excimer Laser Crystallization;IEEE Electron Device Letters;2004-08

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