High-Performance Polycrystalline Silicon Thin Film Transistors on Non-Alkali Glass Produced Using Continuous Wave Laser Lateral Crystallization-Reference-Cited by-同舟云学术

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High-Performance Polycrystalline Silicon Thin Film Transistors on Non-Alkali Glass Produced Using Continuous Wave Laser Lateral Crystallization

Published:2002-03-15 Issue:Part 2, No. 3B Volume:41 Page:L311-L313
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hara Akito,Takeuchi Fumiyo,Takei Michiko,Suga Katsuyuki,Yoshino Kenichi,Chida Mitsuru,Sano Yasuyuki,Sasaki Nobuo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=3B/a=L311/pdf

Cited by 117 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance evaluation of polycrystalline Si_1−xGe_x thin-film transistors fabricated by continuous-wave laser lateral crystallization on glass substrates;Japanese Journal of Applied Physics;2024-06-03

2. Characteristics and deviation of low-temperature FD-SOI-MOSFETs using a sputtering SiO₂ gate insulator;Japanese Journal of Applied Physics;2023-02-14

3. Nanowire single-crystal grain and single grain boundary silicon field effect transistors for direct electrical characterization of grain boundaries;Applied Physics Express;2023-02-01

4. Modeling of High-Current Polycrystalline Silicon Thin Film Transistors by Incorporating Buried Electrode;Journal of Electronic Materials;2022-07-28

5. Elucidation of the Density of States for Polycrystalline Silicon Vertical Thin-Film Transistors;IEEE Transactions on Electron Devices;2022-06

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