Interface Formation and Electrical Properties of TiOxNy/HfO2/Si Structure-Reference-Cited by-同舟云学术

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Interface Formation and Electrical Properties of TiOxNy/HfO2/Si Structure

Published:2002-12-15 Issue:Part 1, No. 12 Volume:41 Page:7282-7287
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ahn Y. S.,Ban S. H.,Kim K. J.,Kang H.,Yang S.,Roh Y.,Lee N.-E.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=12R/a=7282/pdf

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Achieving Cycling Stability in Anode of Lithium-Ion Batteries with Silicon-Embedded Titanium Oxynitride Microsphere;Nanomaterials;2022-12-27

2. Facile preparation of mesoporous titanium nitride microspheres as novel adsorbent for trace Cd2+ removal from aqueous solution;Journal of Physics and Chemistry of Solids;2015-06

3. Preparation of titanium nitride nanoparticles from a novel refluxing derived precursor;Journal of Wuhan University of Technology-Mater. Sci. Ed.;2011-06

4. Synthesis of silica supported titania nanocomposite in controllable phase content and morphology;Applied Physics A;2008-11-06

5. Two-Stage Aerosol Synthesis of Titanium Nitride TiN and Titanium Oxynitride TiOxNy Nanopowders of Spherical Particle Morphology;Chemistry of Materials;2006-05-27

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