Effect of Lattice Mismatch on Electric Properties near Heterointerface of InxGa1-xAsyP1-y(y<0.01)/(100) GaAs-Reference-Cited by-同舟云学术

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Effect of Lattice Mismatch on Electric Properties near Heterointerface of InxGa1-xAsyP1-y(y<0.01)/(100) GaAs

Published:1988-09-20 Issue:Part 1, No. 9 Volume:27 Page:1674-1679
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Zhu Qinsheng,Hiramatsu Kazumasa,Sawaki Nobuhiko,Akasaki Isamu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transport properties of the deformed quaternary InGaAsP epitaxied on different substrates;Optik;2022-10

2. Amphoteric behavior of Ge dopants in In0.5Ga0.5P epilayers grown on GaAs(100) substrates;Journal of Physics and Chemistry of Solids;2001-03

3. Temperature coefficient of the space-charge scattering mobility dependent on the Ge doping concentration in In0.5Ga0.5P epilayers grown on GaAs (100) substrates;Solid State Communications;2000-09

4. Anomalous Behavior of the Hall Effect in III-V Heterostructures;Acta Physica Polonica A;2000-02

5. Negative magnetoresistance and impurity band conduction in an In0.53Ga0.47As/InP heterostructure;Journal of Applied Physics;1999-05

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