The Hysteresis Caused by Interface Trap and Anomalous Positive Charge in Al/CeO2-SiO2/Silicon Capacitors-Reference-Cited by-同舟云学术

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The Hysteresis Caused by Interface Trap and Anomalous Positive Charge in Al/CeO2-SiO2/Silicon Capacitors

Published:1997-12-15 Issue:Part 2, No. 12B Volume:36 Page:L1681-L1684
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Roh Yonghan,Kim Kyunghae,Jung Donggeun

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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