Preparation and Dielectric Properties ofSrBi2Ta2O9Thin Films by Sol-Gel Method-Reference-Cited by-同舟云学术

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Preparation and Dielectric Properties ofSrBi2Ta2O9Thin Films by Sol-Gel Method

Published:1997-09-30 Issue:Part 1, No. 9B Volume:36 Page:5900-5903
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hayashi Takashi,Hara Takuya,Takahashi Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancement of Memory Retention Time of Metal/Ferroelectric/Insulator/Semiconductor Structure by Using Fast Annealing and Nitrogen Radical Irradiation;Journal of the Korean Physical Society;2009-08-14

2. Structural and electrical properties of SrBi2(Ta0.5Nb0.5)2O9 thin films;Journal of Alloys and Compounds;2008-06

3. Deposition of 60 nm thin Sr0.8Bi2.2Ta2O9 layers for application in scaled 1T1C and 1T FeRAM devices;Microelectronic Engineering;2005-06

4. Crystallization and Structural Phase Transformation in Sub-100-nm-Thick SrBi2Ta2O9Thin Film;Japanese Journal of Applied Physics;2005-04-08

5. Polarization properties of praseodymium-modified SrBi2Ta2O9 ceramics and thin films prepared by sol–gel method;Materials Letters;2004-04

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