The Effects on Metal Oxide Semiconductor Field Effect Transistor Properties of Nitrogen Implantation intop+Polysilicon Gate-Reference-Cited by-同舟云学术

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The Effects on Metal Oxide Semiconductor Field Effect Transistor Properties of Nitrogen Implantation intop+Polysilicon Gate

Published:1997-02-15 Issue:Part 1, No. 2 Volume:36 Page:617-622
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yasuoka Akihiko,Kuroi Takashi,Shimizu Satoshi,Shirahata Masayoshi,Okumura Yoshinori,Inoue Yasuo,Inuishi Masahide,Nishimura Tadashi,Miyoshi Hirokazu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On implant-based multiple gate oxide schemes for system-on-chip integration;IEEE Transactions on Electron Devices;2003-03

2. Activation Energy of Silicon Dioxide Nitridation by Nitrogen Ion Implantation;Electrochemistry;2002-10-05

3. Properties of nitrogen doped silicon films deposited by low pressure chemical vapour deposition from disilane and ammonia;Thin Solid Films;2002-07

4. Nitrogen Implantation and In Situ HF Vapor Clean for Deep Submicrometer n-MOSFETs;Journal of The Electrochemical Society;2002

5. Silicide formation in implanted channels and interfacial reactions of metal contacts under high current density;Journal of Materials Research;1999-12

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