A Method for Identifying Sources of Reactive Ion Etch Lag and Loading in a Magnetically Enhanced Reactive Ion Etcher-Reference-Cited by-同舟云学术

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A Method for Identifying Sources of Reactive Ion Etch Lag and Loading in a Magnetically Enhanced Reactive Ion Etcher

Published:1997-07-30 Issue:Part 1, No. 7B Volume:36 Page:4838-4844
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Buie Melisa J.,Pender Jeremiah T. P.,Ventzek Peter L. G.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Macro-loading Effects in Inductively Coupled Plasma Etched Mercury Cadmium Telluride;Journal of Electronic Materials;2016-05-31

4. Limitations of Regularization Methods for the Reconstruction of Electron Velocity Distribution Function;IEEE Transactions on Plasma Science;2011-04

5. Satistical Analysis of SiO2Contact Hole Etching in a Magnetically Enhanced Reactive Ion Etching Reactor;Journal of Magnetics;2010-09-30

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