Analysis of Si–SiO2Interface Using Charge Pumping Method with Various Capping Materials between Gate Stacks and Inter Layer Dielectric in NAND Flash Memory-Reference-Cited by-同舟云学术

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Analysis of Si–SiO2Interface Using Charge Pumping Method with Various Capping Materials between Gate Stacks and Inter Layer Dielectric in NAND Flash Memory

Published:2006-09-07 Issue:9A Volume:45 Page:6841-6844
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kim Nam-Kyeong,Kim Se-Jun,Park Kyoung-Hwan,Choi Eun-Seok,Lee Min-Kyu,Kim Hyeon-Soo,Noh Keum-Hwan,Om Jae-Chul,Lee Hee-Kee,Bae Gi-Hyun

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of mechanical-bending and process-induced stresses on metal effective work function;Solid-State Electronics;2013-01

2. Gate Annealing of Cycling Endurance and Interface States for Highly Reliable Flash Memory;Japanese Journal of Applied Physics;2008-01-18

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