Gate Annealing of Cycling Endurance and Interface States for Highly Reliable Flash Memory-Reference-Cited by-同舟云学术

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Gate Annealing of Cycling Endurance and Interface States for Highly Reliable Flash Memory

Published:2008-01-18 Issue:1 Volume:47 Page:80-82
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kim Nam-Kyeong,Hong Se-Hee,Shim Sa-Yong,Park Min-Hee,Hwang Kyung-Pil,Lee Min-Kyu,Lee Ju-Yeab,Woo Won-Sic,Noh Keum-Hwan,Lee Hee-Kee,Om Jae-Chul,Lee Seok-Kiu,Bae Gi-Hyun

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference8 articles.

1. Introduction to flash memory

2. Degradation of thin tunnel gate oxide under constant Fowler-Nordheim current stress for a flash EEPROM

3. Extrapolation of high-voltage stress measurements to low-voltage operation for thin silicon-oxide films

4. Thickness dependence of stress-induced leakage currents in silicon oxide

5. Modeling of charging damage during interlevel oxide deposition in high-density plasmas

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