Low-Threshold-Voltage HfOxN p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Partially Silicided Platinum Gate Electrode-Reference-Cited by-同舟云学术

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Low-Threshold-Voltage HfOxN p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Partially Silicided Platinum Gate Electrode

Published:2006-08-04 Issue:8A Volume:45 Page:6225-6230
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kadoshima Masaru,Nabatame Toshihide,Iwamoto Kunihiko,Mise Nobuyuki,Ota Hiroyuki,Ogawa Arito,Takahashi Masashi,Ikeda Minoru,Satake Hideki,Toriumi Akira

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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