Rate-Limiting Reactions of Growth and Decomposition Kinetics of Very Thin Oxides on Si(001) Surfaces Studied by Reflection High-Energy Electron Diffraction Combined with Auger Electron Spectroscopy-Reference-Cited by-同舟云学术

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Rate-Limiting Reactions of Growth and Decomposition Kinetics of Very Thin Oxides on Si(001) Surfaces Studied by Reflection High-Energy Electron Diffraction Combined with Auger Electron Spectroscopy

Published:2006-09-07 Issue:9A Volume:45 Page:7063-7079
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ogawa Shuichi,Takakuwa Yuji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Two-step model for reduction reaction of ultrathin nickel oxide by hydrogen;Journal of Vacuum Science & Technology A;2021-07

2. Roles of strain and carrier in silicon oxidation;Japanese Journal of Applied Physics;2020-04-24

3. Simultaneous Observation of Si Oxidation Rate and Oxidation-induced Strain Using XPS;Vacuum and Surface Science;2019-06-10

4. Interfacial oxidation kinetics at SiO2/Si(001) mediated by the generation of point defects: Effect of raising O2 pressure;AIP Advances;2018-07

5. Strain-driven diffusion process during silicon oxidation investigated by coupling density functional theory and activation relaxation technique;The Journal of Chemical Physics;2017-08-07

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