1.3 µm GaInNAs Bandgap Difference Confinement Semiconductor Optical Amplifiers-Reference-Cited by-同舟云学术

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1.3 µm GaInNAs Bandgap Difference Confinement Semiconductor Optical Amplifiers

Published:2006-03-08 Issue:3A Volume:45 Page:1635-1639
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hashimoto Jun-ichi,Koyama Kenji,Katsuyama Tsukuru,Tsuji Yukihiro,Fujii Kousuke,Yamazaki Koichiro,Ishida Akira

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical Study on Dilute Nitride 1.3 $\mu{\rm m}$ Quantum Well Semiconductor Optical Amplifiers: Incorporation of N Compositional Fluctuations;IEEE Journal of Quantum Electronics;2013-10

2. Linear Semiconductor Optical Amplifiers;Springer Series in Optical Sciences;2012

3. Electronic Structure and Optical Properties of Zinc-Blende In x Ga 1− x N y As 1−y by a First-Principles Study;Communications in Theoretical Physics;2011-04

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