Optical Observation of Inhomogeneity of Chromium-Doped Semi-Insulating GaAs-Reference-Cited by-同舟云学术

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Optical Observation of Inhomogeneity of Chromium-Doped Semi-Insulating GaAs

Published:1984-02-20 Issue:Part 1, No. 2 Volume:23 Page:207-211
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kitahara Kuninori,Ozeki Masashi,Shibatomi Akihiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Defects and Transition Elements in Substrates Of Semi-Insulating Gaas on Optical Properties of Algaas/Gaas Quantum-Well Structures;Journal of Russian Laser Research;1998-07

2. Annealing of GaAs single crystal: Relationship between electrical properties and structural defects;Journal of Applied Physics;1989-02

3. On the origin of cathodoluminescence contrast phenomena in semiinsulating GaAs;Physica Status Solidi (a);1988-04-16

4. Photoluminescence from annealed semi‐insulating GaAs crystals: The 1.360‐eV band;Journal of Applied Physics;1988-03-15

5. Redistribution of EL2 in undoped semi-insulating GaAs during annealing under arsenic overpressure;Materials Letters;1988-03

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