Effects of Insulated Gate on Ion Implanted InSb p+n Junctions
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Evaluation of implanted InSb p+n diodes passivated with composite anodic oxide/SiOxstack;physica status solidi (a);2008-10
2. Improvement of current leakage in the InAs photodetector by molecular beam epitaxy;Journal of Crystal Growth;2001-07
3. Study of current leakage in InAs p–i–n photodetectors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
4. Analysis of the dark current in the bulk of InAs diode detectors;Journal of Applied Physics;1996-11
5. Magnetron sputter epitaxy (MSE) of InSb on (100) GaAs and (100, 111) InSb for infrared detector applications;Semiconductor Science and Technology;1991-12-01
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