Influence of Boron in Semi-insulating GaAs Crystals on Their Electrical Activation by Si-Ion Implantation-Reference-Cited by-同舟云学术

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Influence of Boron in Semi-insulating GaAs Crystals on Their Electrical Activation by Si-Ion Implantation

Published:1993-05-15 Issue:Part 1, No. 5A Volume:32 Page:1898-1901
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Okubo Seiichi,Otoki Yoohei,Watanabe Masatoshi,Kuma Shoji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A modulation-doped heterostructure-based terahertz photoconductive antenna emitter with recessed metal contacts;Scientific Reports;2020-11-16

2. Characterization and Control of Defects in VCz GaAs Crystals Grown without B2O3 Encapsulant;Crystal Growth Technology;2010-07-19

3. Vacancy-type defects in boron-reduced VCz GaAs crystals;Journal of Physics and Chemistry of Solids;2008-02

4. Growth of GaAs crystals from Ga-rich melts by the VCz method without liquid encapsulation;Journal of Crystal Growth;2004-09

5. State of the art 6″ SI GaAs wafers made of conventionally grown LEC-crystals;Journal of Crystal Growth;1999-03

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