Growth of GaAs crystals from Ga-rich melts by the VCz method without liquid encapsulation-Reference-Cited by-同舟云学术

Growth of GaAs crystals from Ga-rich melts by the VCz method without liquid encapsulation

Published:2004-09 Issue:2-4 Volume:269 Page:218-228
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kiessling F.-M.,Rudolph P.,Neubert M.,Juda U.,Naumann M.,Ulrici W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference43 articles.

1. A Technique for Pulling Single Crystals of Volatile Materials

2. Liquid encapsulation techniques: The use of an inert liquid in suppressing dissociation during the melt-growth of InAs and GaAs crystals

3. Crystal Growth Technology;Rudolph,2003

4. M. Jurisch, in: P. Kiesel, S. Malzer, T. Marek (Eds.), Proceedings of the Symposium on Non-Stoichiometric III–V Compounds, Physik mikrostrukturierter Halbleiter Bd.6, Erlangen-Nürnberg, Friedrich-Alexander-Universität, 1998, p. 135.

5. A comprehensive thermodynamic analysis of native point defect and dopant solubilities in gallium arsenide

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