Observation of Microdefects in As-Grown Czochralski Silicon Crystals by Synchrotron Radiation Topography-Reference-Cited by-同舟云学术

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Observation of Microdefects in As-Grown Czochralski Silicon Crystals by Synchrotron Radiation Topography

Published:1993-07-15 Issue:Part 2, No. 7B Volume:32 Page:L971-L973
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sugita Yoshimitsu,Iida Satoshi,Aoki Yoshirou,Okitsu Kouhei,Tsuneda Masayuki,Takeno Hiroshi,Abe Takao,Kawata Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Grown-in Microdefects in a Slowly Grown Czochralski Silicon Crystal Observed by Synchrotron Radiation Topography;Japanese Journal of Applied Physics;2000-11-15

2. An optical study on dislocation clusters in a slowly pulled silicon crystal;Journal of Applied Physics;1999-12

3. Section Topography in Bragg-case Used for Kinematical Imaging of Microdefects in Si Crystals;Japanese Journal of Applied Physics;1999-01-01

4. Microdefects in an As-Grown Czochralski Silicon Crystal Studied by Synchrotron Radiation Section Topography with Aid of Computer Simulation;Japanese Journal of Applied Physics;1998-01-15

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