Addendum to Empty- and Filled-Electronic States of the Si(111)\(\sqrt{3}{\times}\sqrt{3}\)-Sn \(\sqrt{3}{\times}\sqrt{3}\)-In and \(2\sqrt{3} {\times} 2\sqrt{3}\)-Sn Surfaces-Reference-Cited by-同舟云学术

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Addendum to Empty- and Filled-Electronic States of the Si(111)\(\sqrt{3}{\times}\sqrt{3}\)-Sn \(\sqrt{3}{\times}\sqrt{3}\)-In and \(2\sqrt{3} {\times} 2\sqrt{3}\)-Sn Surfaces

Published:1988-12 Issue:12 Volume:57 Page:4452-4452
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Ohta Hiroshi¹,Kinoshita Toyohiko¹,Yaegashi Yukou¹,Suzuki Shoji¹,Kono Shozo¹

Affiliation:

1. Department of Physics, Faculty of Science, Tohoku University

Publisher

Japan Society of Applied Physics

Subject

General Physics and Astronomy

Link

https://journals.jps.jp/doi/pdf/10.1143/JPSJ.57.4452

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Many-body effects in the electronic structure of Sn/Si(111)-α-(3)1/2;Journal of Physics: Condensed Matter;2001-05-18

2. Surface electronic structure of a single-domain Si(111)4 × 1-In surface: a synchrotron radiation photoemission study;Surface Science;1995-02

3. High-Resolution Isochromat Inverse Photoemission Spectroscopy;Japanese Journal of Applied Physics;1993-12-15

4. Structure analysis of the single-domain Si(111)4 × 1-In surface by μ-probe Auger electron diffraction and μ-probe reflection high energy electron diffraction;Surface Science;1991-10

5. VUV and Soft-X-Ray Photoemission Studies of Electronic and Atomic Structures of Metal-Overlayers on Silicon Surfaces;Physica Scripta;1990-01-01

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