Many-body effects in the electronic structure of Sn/Si(111)-α-(3)1/2
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Reference28 articles.
1. Si(111)3×3-Al: An Adatom-Induced Reconstruction
2. Direct observation of a surface charge density wave
3. Metal-semiconductor fluctuation in the Sn adatoms in the Si(111)-Sn and Ge(111)-Sn (√3×√3)R30° reconstructions
4. Dynamical Fluctuations as the Origin of a Surface Phase Transition inSn/Ge(111)
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Embedded Nanostructures Revealed in Three Dimensions;Science;2005-09-30
2. Electronic structure of Sn/Si(111)-(3×3)R30°as a function of Sn coverage;Physical Review B;2003-12-31
3. COMPLEX BEHAVIORS AT SIMPLE SEMICONDUCTOR AND METAL/SEMICONDUCTOR SURFACES;Surface Review and Letters;2003-12
4. Dynamical fluctuations and the $\surd$3 $times$ $\surd$3 $\leftrightarrow$ 3 $times$ 3 transition in $\alpha$-Sn/Ge(111) and Sn/Si(111);Journal of Physics: Condensed Matter;2002-06-08
5. Contrasted electronic properties of Sn-adatom-based(3×3)R30°reconstructions on Si(111);Physical Review B;2001-08-23
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