Electron Spin Resonance Studies on Ion-Implanted Silicon. II. Conduction Electrons-Reference-Cited by-同舟云学术

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Electron Spin Resonance Studies on Ion-Implanted Silicon. II. Conduction Electrons

Published:1973-08 Issue:8 Volume:12 Page:1190-1197
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hasegawa Seiichi,Karimoto Hiroyasu,Shimizu Tatsuo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/12/i=8/a=1190/pdf

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Current Transport in Doped Polycrystalline Silicon;Japanese Journal of Applied Physics;1980-04

2. Microwave contactless method of conductivity measurement in the studies of ion implantation effects;Radiation Effects;1980-01

3. Electrical activation process of phosphorus atoms with annealing for doped CVD poly‐Si;Journal of Applied Physics;1979-11

4. Literatur;Ionenimplantation;1978

5. The Lattice Location of Phosphorus Atoms Implanted into Silicon;Japanese Journal of Applied Physics;1976-02

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