Electrical activation process of phosphorus atoms with annealing for doped CVD poly‐Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.325805
Reference7 articles.
1. J. Cryst. Growth45(1978).JCRGAE0022-0248
2. Doping and annealing effects on ESR in chemically vapor deposited amorphous silicon
3. Effect of Doping on the Electron Spin Resonance in Phosphorus Doped Silicon. III. Absorption Intensity
4. Theory of the Effect of Spin-Orbit Coupling on Magnetic Resonance in Some Semiconductors
5. Absolute Spin Susceptibilities and Other ESR Parameters of Heavily Dopedn-Type Silicon. I. Metallic Samples
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