High Performance Resists Tailored for 248 nm Chemical Amplification of Resist Lines Technology-Reference-Cited by-同舟云学术

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High Performance Resists Tailored for 248 nm Chemical Amplification of Resist Lines Technology

Published:1991-11-30 Issue:Part 1, No. 11B Volume:30 Page:3108-3115
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sezi Recai,Borndörfer Horst,Leuschner Rainer,Nölscher Christoph,Sebald Michael,Ahne Hellmut,Birkle Siegfried

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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4. New silicon-rich silylating reagents for dry-developed positive-tone deep-ultraviolet lithography;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-11

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