Lateral Metalorganic Molecular Beam Epitaxy of GaAs on Patterned (\bar111)B Substrates-Reference-Cited by-同舟云学术

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Lateral Metalorganic Molecular Beam Epitaxy of GaAs on Patterned (\bar111)B Substrates

Published:1991-12-30 Issue:Part 1, No. 12B Volume:30 Page:3771-3773
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nomura Yasuhiko,Morishita Yoshitaka,Goto Sigeo,Katayama Yoshifumi,Isu Toshiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Self-organization of nanostructures on planar and patterned high-index semiconductor surfaces;Microelectronics Journal;1997-10

2. Orientation-dependent Ga surface diffusion in molecular beam epitaxy of GaAs on GaAs patterned substrates;Journal of Applied Physics;1997-06

3. Patterned growth on GaAs (3 1 1)A substrates;Journal of Crystal Growth;1997-05

4. Growth of GaAs by molecular-beam epitaxy using trisdimethylaminoarsine;Journal of Crystal Growth;1995-04

5. Uniform selective area growth of GaAs and GaInP by low temperature chemical beam epitaxy;Journal of Crystal Growth;1995-03

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