Solid-Phase Epitaxy with X-Ray Irradiation to Grow Dislocation-Free Silicon Films at Low Temperatures-Reference-Cited by-同舟云学术

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Solid-Phase Epitaxy with X-Ray Irradiation to Grow Dislocation-Free Silicon Films at Low Temperatures

Published:1991-02-01 Issue:Part 2, No. 2A Volume:30 Page:L205-L208
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sato Fumio,Goto Katsuyuki,Chikawa Jun-ichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 42 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Photon Energy on Crystallization of Si-Related Amorphous Film by SR Soft X-Ray;Journal of the Vacuum Society of Japan;2014

2. Surface Nano-Modification and Low-Temperature Crystallization of Si-Related Semiconductors by Soft X-Ray Irradiation;PRICM;2013-09-06

3. Crystallization of Si1-xGexMultilayer by Soft X-ray Irradiation;Applied Physics Express;2013-06-01

4. Low-temperature crystallization of amorphous silicon and amorphous germanium by soft X-ray irradiation;Thin Solid Films;2013-05

5. Dielectric Materials under Electron Irradiation in a Scanning Electron Microscope;Dielectric Materials for Electrical Engineering;2013-03-07

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