The Effects of HCl Added to Chemical Vapor Deposition Source Gases for Producing a SiC X-Ray Mask Membrane-Reference-Cited by-同舟云学术

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The Effects of HCl Added to Chemical Vapor Deposition Source Gases for Producing a SiC X-Ray Mask Membrane

Published:1991-11-30 Issue:Part 1, No. 11B Volume:30 Page:3074-3077
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Murooka Ken-ichi,Itoh Masamitsu,Komano Haruki,Gomei Yoshio

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Conformal and superconformal chemical vapor deposition of silicon carbide coatings;Journal of Vacuum Science & Technology A;2022-09

2. DEPOSITION TECHNIQUES FOR SIC MEMS;Silicon Carbide Microelectromechanical Systems for Harsh Environments;2006-06

3. Stress control of a-SiC films deposited by dual source dc magnetron sputtering;Vacuum;2006-05

4. Hydrogen Chloride Effects on the CVD of Silicon Carbide from Methyltrichlorosilane;Chemical Vapor Deposition;1998-12

5. A Kinetic Study of the Chemical Vapor Deposition of Silicon Carbide from Dichlorodimethylsilane Precursors;Journal of The Electrochemical Society;1998-04-01

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