A GaAs Floated Electron Channel Field Effect Transistor (FECFET) Fabricated by Selective Metal Organic Chemical Vapor Deposition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Fabrication of Novel Active Resistor Using Selective Metal Organic Chemical Vapor Deposition (MOCVD) for Monolithic Integration;Japanese Journal of Applied Physics;2001-02-01
2. Formation of macroscopic steps during selective area metalorganic chemical vapor deposition on GaAs (0 0 1) vicinal substrates;Journal of Crystal Growth;1997-05
3. New Fabrication Technology for Integrating Field Effect Transistors and Diodes;Japanese Journal of Applied Physics;1996-02-28
4. Influence of Substrate Misorientation on Facet Formation in Selective Area Metalorganic Chemical Vapor Deposition;MRS Proceedings;1996
5. Numerical Simulation on the Device Structure of GaAs Floated Electron Channel Field-Effect Transistor;Japanese Journal of Applied Physics;1995-02-28
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