Numerical Simulation on the Device Structure of GaAs Floated Electron Channel Field-Effect Transistor
-
Published:1995-02-28
Issue:Part 1, No. 2B
Volume:34
Page:1228-1231
-
ISSN:0021-4922
-
Container-title:Japanese Journal of Applied Physics
-
language:en
-
Short-container-title:Jpn. J. Appl. Phys.
Author:
Lee Yoon-Jong,Kim Chang-Tae,Hong Song-Cheol,Kwon Young-Se,Yoon Hee-Koo,Oh Kye-Whan
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering