Evaluation of Device Charging in Ion Implantation-Reference-Cited by-同舟云学术

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Evaluation of Device Charging in Ion Implantation

Published:1991-11-30 Issue:Part 1, No. 11B Volume:30 Page:3223-3227
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Namura Takashi,Ishikawa Katsuya,Aoki Norishige,Fukuzaki Yoshiki,Todokoro Yoshihiro,Inoue Morio

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. 2-D Measurement of Charged Particles Diffusing From a Double DC Corona Discharge Ionizer;IEEE Transactions on Plasma Science;2013-08

3. Neutralization of static surface charges by an ac ionizer in a nitrogen and dry air environment;Journal of Applied Physics;2002-02

4. Clean Level Monitoring in Production Lines;Ultraclean Surface Processing of Silicon Wafers;1998

5. Surface charge control during high-current ion implantation: characterization with CHARM-2 sensors;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-03

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