Pd-on-GaAs Schottky Contact: Its Barrier Height and Response to Hydrogen-Reference-Cited by-同舟云学术

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Pd-on-GaAs Schottky Contact: Its Barrier Height and Response to Hydrogen

Published:1991-05-15 Issue:Part 1, No. 5 Volume:30 Page:906-913
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nie Heng-Yong,Nannichi Yasuo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 51 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of metal contacts on (100) β-Ga2O3 Schottky barriers;Journal of Vacuum Science & Technology A;2021-05

2. GaAs Porous Films Electroetching Improvement By Using a Fuzzy Controller;2019 IEEE 9th International Conference Nanomaterials: Applications & Properties (NAP);2019-09

3. Hydrogen sensing characteristics of a Pd/Nickel oxide/GaN-based Schottky diode;International Journal of Hydrogen Energy;2019-03

4. Enhancement of Hydrogen Sensing Performance of a Pd Nanoparticle/Pd Film/GaOx/GaN-Based Metal–Oxide– Semiconductor Diode;IEEE Transactions on Electron Devices;2018-10

5. Hydrogen sensing performance of a Pd/HfO2/GaN metal-oxide-semiconductor (MOS) Schottky diode;Sensors and Actuators B: Chemical;2018-06

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