Effect of metal contacts on (100) β-Ga2O3 Schottky barriers-Reference-Cited by-同舟云学术

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Effect of metal contacts on (100) β-Ga2O3 Schottky barriers

Published:2021-05 Issue:3 Volume:39 Page:033202
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:Journal of Vacuum Science & Technology A

Author:

Lyle Luke A. M.¹^ORCID,Jiang Kunyao¹,Favela Elizabeth V.¹,Das Kalyan²,Popp Andreas³,Galazka Zbigniew³^ORCID,Wagner Guenter³,Porter Lisa M.¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213

2. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695

3. Leibniz-Institut für Kristallzchtüng, Berlin 12489, Germany

Funder

Air Force Office of Scientific Research

Leibniz Association

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://avs.scitation.org/doi/am-pdf/10.1116/6.0000877

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1. Gallium Oxide‐Based Field Effect Transistors;physica status solidi (a);2024-07-17

2. Effect of inductively coupled plasma etch on the interface barrier behavior of (001) β-Ga2O3 Schottky barrier diode;Journal of Vacuum Science & Technology B;2024-06-07

3. Mo/Au β-Ga₂O₃ Schottky Barrier Diodes With Low Turn-On Voltage and High On–Off Ratios for Low-Power Consumption Applications;IEEE Transactions on Electron Devices;2024-06

4. PtOx Schottky Contacts on Degenerately Doped $$\left( {\overline{2}01} \right)$$ β-Ga2O3 Substrates;Journal of Electronic Materials;2024-03-05

5. Current transport mechanisms of metal/TiO2/β-Ga2O3 diodes;Journal of Applied Physics;2024-03-04

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